JPH0224563U - - Google Patents

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Publication number
JPH0224563U
JPH0224563U JP1988101112U JP10111288U JPH0224563U JP H0224563 U JPH0224563 U JP H0224563U JP 1988101112 U JP1988101112 U JP 1988101112U JP 10111288 U JP10111288 U JP 10111288U JP H0224563 U JPH0224563 U JP H0224563U
Authority
JP
Japan
Prior art keywords
metal layer
view
semiconductor device
perspective
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1988101112U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988101112U priority Critical patent/JPH0224563U/ja
Publication of JPH0224563U publication Critical patent/JPH0224563U/ja
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)
JP1988101112U 1988-08-01 1988-08-01 Pending JPH0224563U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988101112U JPH0224563U (en]) 1988-08-01 1988-08-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988101112U JPH0224563U (en]) 1988-08-01 1988-08-01

Publications (1)

Publication Number Publication Date
JPH0224563U true JPH0224563U (en]) 1990-02-19

Family

ID=31329807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988101112U Pending JPH0224563U (en]) 1988-08-01 1988-08-01

Country Status (1)

Country Link
JP (1) JPH0224563U (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8436359B2 (en) 2006-07-21 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240762A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS62183166A (ja) * 1986-02-06 1987-08-11 Toshiba Corp 読み出し専用半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240762A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS62183166A (ja) * 1986-02-06 1987-08-11 Toshiba Corp 読み出し専用半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8436359B2 (en) 2006-07-21 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013084963A (ja) * 2006-07-21 2013-05-09 Semiconductor Energy Lab Co Ltd 半導体装置

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